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具有纵向栅极结构的常关型HEMT器件

Release Time:2022-10-19  Hits:

First Author: 黄火林

Disigner of the Invention: 孙仲豪,梁红伟,夏晓川,杜国同,Jiming Bian,胡礼中

Institution: 光电工程与仪器科学学院

Application Number: CN205508826U

Authorization Number: CN201620147905.6

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