Nv3rojVufEQiF1KIm15EFQHFB9H8KZ58rWn6GUUOMqyH7U3ZuHwCxPbuqrKO
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AlN/GaN/自持金刚石结构SAW器件及制备方法

Release Time:2022-10-19  Hits:

First Author: Qin Fuwen

Disigner of the Invention: 白亦真,张东,John Wu,Jiming Bian

Institution: 物理学院

Application Number: CN102185583A

Authorization Number: CN201110062224.1

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