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Indexed by:会议论文

Date of Publication:2010-06-26

Included Journals:EI、CPCI-S、Scopus

Volume:675-677

Page Number:53-56

Key Words:silicon; directional solidification; solidification rate; segregation; purification

Abstract:In this paper, the structure and composition of multicrystalline silicon ingots prepared by directional solidification with different pulling rates were analyzed to investigate the effect of pulling rate on the multicrystalline silicon ingot. The results showed that the lower pulling rate will make the site taking place constitutional supercooling move to the upper part of ingots and make the high purity area become larger. Lowering the pulling rate will decrease the impurity effective segregation coefficient and the solid-liquid interface curvature.