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Indexed by:会议论文

Date of Publication:2010-06-26

Included Journals:CPCI-S、EI、Scopus

Volume:675-677

Page Number:101-+

Key Words:multi-crystalline silicon ingot; vacuum induction melting; impurities; electrical properties

Abstract:Multi-crystalline silicon ingots were prepared by directional solidification using vacuum induction melting furnace. The content of aluminum and iron deeply decreased in the columnar crystal region of the multi-crystalline silicon ingots. The columnar crystal growth broke off corresponded to the iron contents sharply increased. The height of columnar crystal in the silicon ingots related to the pulling rates had been clarified by the constitutional supercooling theory. The maximum of the resistivity and the minority carrier lifetime closed to the transition zone where the conductive type changed from p-type to n-type in silicon ingots. Further analysis suggested that the electrical properties were related to the contents of shallow level impurities aluminum; boron and phosphorus.