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Indexed by:期刊论文

Date of Publication:2017-07-01

Journal:DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES

Included Journals:Scopus、SCIE

Volume:12

Issue:3

Page Number:785-795

ISSN No.:1842-3582

Key Words:Electron Beam Melting; Multi Crystalline Silicon; Redistribution of SiC

Abstract:To investigate the carbon and silicon carbide flow behavior during the electron beam melting (EBM) process, 100 gram of multi-crystalline silicon with the contamination of SiC was melted in an electron beam furnace for five minutes. The EBM Experiment performed in the contaminated sample caused the redistribution of the impurities. The Electron Probe Microstructure Analysis (EPMA) microscopy, SEM and EDS have been utilized to experimentally observe the redistribution pattern. After EBM, carbon enriches in the form of SiC at the bottom of the ingot but not in the center. The results show that there is great temperature gradient existing in the melt during EBM, so the melt near copper crucible shows low temperature and bad fluidity. Carbon in silicon melt flows with the melt, precipitated and gathered in this area so that it is separated due the segregation of the impurities alongside the bottom of the sample through EBM technique.