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Indexed by:会议论文

Date of Publication:2017-06-23

Included Journals:EI

Volume:911 MSF

Page Number:51-55

Abstract:Large temperature gradient was introduced to improve the removal rate of metal impurity in silicon ingot during direction solidification. The concentration of metal impurities in the silicon ingot with a large temperature gradient is 0.96 ppmw. The solidification time is reduced by 20% due to the fast speed of crystal growth improved; meanwhile the purity is increased by 64%. © 2018 Trans Tech Publications, Switzerland.