Release Time:2019-03-11  Hits:

Indexed by: Conference Paper

Date of Publication: 2011-10-19

Included Journals: Scopus、EI

Volume: 148-149

Page Number: 947-950

Abstract: Multi-crystalline silicon ingot was prepared by directional solidification method using metallurgical grade silicon as raw materials. The influence of impurities and crystalline defects in mc-Si on the minority carrier lifetime and resistivity was investigated. The results indicate that both grain boundary and impurities play important roles in the deterioration of the minority carrier lifetime. ? (2012) Trans Tech Publications, Switzerland.