Release Time:2019-07-01  Hits:

Indexed by: Journal Article

Date of Publication: 2019-05-01

Journal: INTERNATIONAL JOURNAL OF MATERIALS RESEARCH

Included Journals: CPCI-S、SCIE

Volume: 110

Issue: 5

Page Number: 476-480

ISSN: 1862-5282

Key Words: Electron beam melting; Silicon; Carbon; Redistribution; SiC

Abstract: Electron beam melting was utilized to investigate the behavior of carbon flow by melting 100 g of multi-crystalline silicon in an electron beam furnace for five minutes. Carbon and nitrogen are the constituent impurities in contaminated Si samples with an average weight of 13% and 9%, respectively. The electron beam melting experiment caused redistribution of the impurities along the periphery and bottom of the Si sample with a pie-shaped structure. Investigations through scanning electron microscopy and energy dispersive X-ray spectroscopy confirmed that the impurities were silicon nitride and silicon carbide. It was determined that Si3N4 has a rod-shaped microstructure, whereas SiC has a granular morphology. By segregating the impurities redistributed through this technique, pure Si was obtained in the remaining sample.