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Indexed by:期刊论文

Date of Publication:2019-05-01

Journal:INTERNATIONAL JOURNAL OF MATERIALS RESEARCH

Included Journals:SCIE、CPCI-S

Volume:110

Issue:5

Page Number:476-480

ISSN No.:1862-5282

Key Words:Electron beam melting; Silicon; Carbon; Redistribution; SiC

Abstract:Electron beam melting was utilized to investigate the behavior of carbon flow by melting 100 g of multi-crystalline silicon in an electron beam furnace for five minutes. Carbon and nitrogen are the constituent impurities in contaminated Si samples with an average weight of 13% and 9%, respectively. The electron beam melting experiment caused redistribution of the impurities along the periphery and bottom of the Si sample with a pie-shaped structure. Investigations through scanning electron microscopy and energy dispersive X-ray spectroscopy confirmed that the impurities were silicon nitride and silicon carbide. It was determined that Si3N4 has a rod-shaped microstructure, whereas SiC has a granular morphology. By segregating the impurities redistributed through this technique, pure Si was obtained in the remaining sample.