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Date of Publication:2010-01-01

Journal:材料研究学报

Volume:24

Issue:4

Page Number:373-377

ISSN No.:1005-3093

Abstract:Purification mechanism of impurity aluminum in multicrystalline silicon
   ingot made from metallurgical-grade silicon was investigated by
   composition analysis and theoretical analysis of vacuum induction
   melting and directional solidification. The results showed that the
   content of impurity aluminum was significantly decreased due to the
   obviously evaporation in the stage of thermal insulation (T≥1723 K).The
   segregation of impurity aluminum plays an important role in the
   distribution of aluminum in subsequent directional solidification
   process, but a little amount aluminum evaporation still happened. A new
   theoretical model including segregation phenomenon and evaporation
   mechanism was developed to simulate the distribution of aluminum in
   multicrystaliine silicon. The result of simulation was well consistent
   with the measured distribution of aluminum in the obtained ingot

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