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Date of Publication:2010-01-01

Journal:材料工程

Affiliation of Author(s):材料科学与工程学院

Issue:8

Page Number:8-11

ISSN No.:1001-4381

Abstract:Aluminum impurity with high vapor pressure in metallurgical grade silicon was removed effectively by electron beam melting. Comparing the calculated value and the measure evaporation loss, the mechanism of aluminum evaporation through the surface of the molten silicon can be assumed that the removal rate-limiting step of aluminum impurity in silicon is diffusion step. In addition, the relationship between the removal amount of the aluminum and silicon loss is also discussed.

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