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Date of Publication:2010-01-01

Journal:材料研究学报

Affiliation of Author(s):材料科学与工程学院

Volume:24

Issue:6

Page Number:592-596

ISSN No.:1005-3093

Abstract:Metallurgical grade silicon was purified by electron beam melting(EBM)
   method. The distribution of aluminum in the ingot was found that
   aluminum was dragged from the bottom to the top and from the edge to the
   center of the ingot. The aluminum content in the edge was the lowest,
   even lower than the detection limit(1*10~(-5)%) of ICP-AES.The
   evaporation of aluminum during EBM process was studied both
   theoretically and experimentally. The relationship between the removal
   efficiency for aluminum and the surface temperature of the melting
   silicon and melting time was deduced from Langmuir's equation and Henry
   law. It showed that the removal efficiency of impurity aluminum
   increased with the increase of the melting time and the surface
   temperature of the melting silicon. Good agreement was found between the
   calculated value and the measured value

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