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Date of Publication:2014-01-01

Journal:功能材料

Affiliation of Author(s):材料科学与工程学院

Issue:8

Page Number:8129-8133

ISSN No.:1001-9731

Abstract:Study on the effect of porous silicon gettering by electron beam injection was conducted. Preparation of porous silicon was carried out by electrochemical etching in both electrobath. The morphology of porous silicon changed after electron beam injection. Through 3 min gettering treatment, the resistivity changed significantly and greater than the resistivity of the silicon wafers from rapid heat treatment under the same condition, which fully improves that electron beam injection play a dual role of thermal effects and electrical effects, and electron beam injection have a certain effect on the removal of impurities. The time of the electron beam injection shows certain effect on the removal effectiveness of boron.

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