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Date of Publication:2008-01-01

Journal:稀有金属

Issue:4

Page Number:473-477

ISSN No.:0258-7076

Abstract:It is considered that using relatively inexpensive metallurgical grade silicon (MG-Si) as a starting material for making solar grade silicon (SOG-Si) would be one of the ways to make solar cells less expensive . Resistivity of polycrystalline silicon is one of the most important parameters for the material use. Using the four point resistivity test system, metallo-scope, scanning electron microscope (SEM), inductively-coupled plasma spectrometer (ICP), energy spectrum analysis (EDS), X-ray diffraction instrument (XRD) etc., the influence of nickel diffused at high temperature on electrical properties of polycrystalline silicon, obtained by metallurgic method and its mechanism were investigated. The results showed that Ni impurity made the resistivity of N type polycrystalline silicon increased, and of P type decreased; and after cooling from high temperature, much more Ni atoms were combined with Si atoms to form NiSi2precipitate, on the silicon surface, which played as an absorbent of Fe to form Fe0.42Si2.67owing to a little of Fe. The sili-cides caused the change of resistivity of polycrystalline silicon.

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