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Indexed by:期刊论文

Date of Publication:2022-06-29

Journal:机械工程材料

Volume:35

Issue:3

Page Number:52

ISSN No.:1000-3738

Abstract:Multicrystal silicon (mc-Si) ingot was prepared using 1101 commercial
   silicon as raw material by vacuum induction melting and unidirectional
   solidification purification. The chemical composition, microstructure,
   resistivity and conductive type of the ingot were analyzed by inductive
   coupled plasma-optical emission spectrometer, scanning electron
   microscopy, four points resistivity test machine and conductive type
   tester. The results show that nearly half of the mc-Si ingot was
   purified to 99. 99%, and over 90% of the metal impurities including Fe,
   Cu and Ni had been removed. The impurities had been redistributed by the
   segregation effect, which led to the break-up of large columnar crystals
   growth at 54% height. While the impurity composition and resistivity
   changed greatly, and the conductive type changed from P type to N type

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