KrFXtJyiBwhX4SFmcKaDvMDVwToXP96U0PB2W3eqIdeOgbYa8XOkcbOvwvsl
Current position: Home >> Scientific Research >> Patents

原位反应法制备石墨坩埚表面的SiC涂层的方法

Release Time:2019-03-09  Hits:

First Author: Yi Tan

Disigner of the Invention: 李佳艳,游小刚

Application Number: CN201310719947.3

Authorization Date: 2013-12-23

Authorization Number: CN103787694A

Prev One:一种提高镍基高温合金纯净度的方法

Next One:一种740合金表面抗氧化涂层的制备方法
Recommended Ph.D.Supervisor Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Mobile phone sweep