Current position: Home >> Scientific Research >> Patents

去除多晶硅中杂质磷和金属杂质的方法及装置

Hits:

First Author:Yi Tan

Disigner of the Invention:李国斌,jiangdachuan,xufumin,王强

Application Number:CN200810011631.8

Authorization Date:2008-05-30

Authorization number:CN101289188

Pre One:一种化学冶金提纯多晶硅的方法

Next One:一种去除多晶硅中杂质磷的方法及装置
Recommended Ph.D.Supervisor Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click : times
  • MOBILE Version
    •
    Open time:..
    The Last Update Time:..

    Mobile phone sweep