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一种高纯硅衬底下电子束熔炼提纯多晶硅的方法及设备

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First Author:Yi Tan

Disigner of the Invention:刘应宽,盛之林,lijiayan,shishuang,刘振远,董伟,jiangdachuan

Application Number:CN201110220767.1

Authorization Date:2011-08-03

Authorization number:CN102408112A

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