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一种高纯硅衬底下电子束熔炼提纯多晶硅的方法及设备

Release Time:2022-10-19  Hits:

First Author: Yi Tan

Disigner of the Invention: 刘应宽,盛之林,李佳艳,石爽,刘振远,董伟,姜大川

Institution: 材料科学与工程学院

Application Number: CN102408112A

Authorization Number: CN201110220767.1

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