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原位反应法制备石墨坩埚表面的SiC涂层的方法

Release Time:2022-10-20  Hits:

First Author: Yi Tan

Disigner of the Invention: 游小刚,李佳艳

Institution: 材料科学与工程学院

Application Number: CN103787694A

Authorization Number: CN201310719947.3

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