Current position: Home >> Scientific Research >> Patents

高纯中空硅材料、多晶硅铸锭硅真空固液分离方法及设备

Hits:

First Author:jiangdachuan

Disigner of the Invention:renshijiang,shishuang,Yi Tan,Jason Jieshan Qiu

Affilication of Author(s):材料科学与工程学院

Application Number:CN103266349A

Authorization number:CN201310209897.4

Pre One:一种用于铸锭分离高金属杂质区的设备及方法法

Next One:一种多晶硅介质熔炼时除硼的造渣剂及其使用方法
Recommended Ph.D.Supervisor Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click : times
  • MOBILE Version
    •
    Open time:..
    The Last Update Time:..

    Mobile phone sweep