Current position: Home >> Scientific Research >> Patents

一种电子束过热熔炼去除多晶硅中金属杂质的方法和装置

Release Time:2019-03-09  Hits:

First Author: 姜大川

Disigner of the Invention: Yi Tan,王登科,石爽

Application Number: CN201410829665.3

Authorization Date: 2014-12-25

Authorization Number: CN104556050A

Prev One:一种电子束熔炼多晶硅粉体横向拉锭的装置及方法

Next One:一种在多晶硅定向凝固提纯中分离高金属杂质区的设备及分离方法
Recommended Ph.D.Supervisor Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Mobile phone sweep