论文类型：期刊论文
发表刊物：MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
收录刊物：Scopus、EI、SCIE
卷号：67
页面范围：1-7
ISSN号：1369-8001
关键字：Directional solidification; Grain morphology; Interstitial impurity; Substitutional impurity
摘要：A multicrystalline silicon ingot with columnar and irregular grains was obtained from metallurgical-grade silicon (MG-Si) by directional solidification. The segregation behaviors of substitutional and interstitial impurities in different grain morphologies have been studied. The concentration distribution of substitutional impurities (B and Al) in the silicon ingot was accord with the Scheil's equation, which depended on the grain morphology. However, the concentration distribution of interstitial impurities (Fe, Ti, Cu, and Ni) was only accord with the Scheil's equation under the columnar grains growth condition. The difference lattice sites of the impurities will result in the disparate segregation behavior of impurities for columnar and irregular grains growth, which leads to the diverse concentration distribution of substitutional and interstitial impurities in the silicon ingot. Furthermore, the transport mechanism of interstitial and substitutional impurities in front of the solid-liquid interface boundary has been revealed.