论文名称：镍对冶金法制备多晶硅电学性能的影响
发表刊物：稀有金属
期号：4
页面范围：473-477
ISSN号：0258-7076
摘要：It is considered that using relatively inexpensive metallurgical grade silicon (MG-Si) as a starting material for making solar grade silicon (SOG-Si) would be one of the ways to make solar cells less expensive . Resistivity of polycrystalline silicon is one of the most important parameters for the material use. Using the four point resistivity test system, metallo-scope, scanning electron microscope (SEM), inductively-coupled plasma spectrometer (ICP), energy spectrum analysis (EDS), X-ray diffraction instrument (XRD) etc., the influence of nickel diffused at high temperature on electrical properties of polycrystalline silicon, obtained by metallurgic method and its mechanism were investigated. The results showed that Ni impurity made the resistivity of N type polycrystalline silicon increased, and of P type decreased; and after cooling from high temperature, much more Ni atoms were combined with Si atoms to form NiSi2precipitate, on the silicon surface, which played as an absorbent of Fe to form Fe0.42Si2.67owing to a little of Fe. The sili-cides caused the change of resistivity of polycrystalline silicon.
备注：新增回溯数据
发表时间：2008-01-01