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Indexed by:期刊论文

Date of Publication:2016-07-01

Journal:JOURNAL OF LUMINESCENCE

Included Journals:SCIE、EI、Scopus

Volume:175

Page Number:67-70

ISSN No.:0022-2313

Key Words:Amorphous silicon-nitride; Quantum dot; Photoluminescence

Abstract:Amorphous hydrogenated silicon-nitride (alpha-SiNx:H) quantum-dot (QD) films were successfully deposited on Si substrates using a specially designed system of plasma enhanced chemical vapor deposition. The alpha-SiNx:H QD films exhibit strong visible photoluminescence (PL) with a tunable peak energy ranging from 3.26 to 2.52 eV, depending on the deposition pressure. The PL process was studied in terms of temperature-dependent and time-resolved PL spectra in comparison with the theoretical predication of the band-tail luminescence, and then the tunable PL spectra were assigned to the recombination of excitons in the localized states at the band tails of the alpha-SiNx:H QDs. (C) 2016 Elsevier B.V. All rights reserved.