邓德伟

个人信息Personal Information

副教授

硕士生导师

性别:男

毕业院校:大连理工大学

学位:博士

所在单位:材料科学与工程学院

学科:材料加工工程. 材料表面工程

办公地点:大连甘井子区软件园路80号大连理工大学科技园大厦B座510房间

联系方式:HANDY:13998509875 TEL: 86-411-84706561-8051 FAX: 86-411-84788732 deng@dlut.edu.cn 191753572@qq.com

电子邮箱:deng@dlut.edu.cn

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Simulation and experiment for crack arrest in remanufacturing

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论文类型:期刊论文

发表时间:2016-11-01

发表刊物:INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY

收录刊物:SCIE、EI、Scopus

卷号:87

期号:5-8

页面范围:1547-1556

ISSN号:0268-3768

关键字:Remanufacturing; Crack arrest; Numerical simulation; Microstructure; High pulsed current

摘要:Remanufacturing is the only way for sustainable development of mechanical equipment manufacturing. For remanufacturing blanks containing cracks, the primary task is the prevention of crack propagation to ensure effectiveness of the manufacturing processes to follow. When pulsed current passes through a specimen, due to the existence of crack, the temperature around the crack tips rises sharply and may even climb above the fusion point of the material, which causes the crack tip to become blunt. In this work, with compressor rotor blade material FV520B as a specimen, the distributions of current density, temperature field, and stress field are calculated at the instant of discharge based on the thermo-electro-structure coupled theory. The crack arrest experiment is performed on high pulsed current discharge device of type HCPD-I. By making comparisons of morphology, microstructure, and size of fusion zone and heat-affected zone (HAZ) around the crack tip before and after energizing, the relationships between the sizes of fusion zone and the HAZ and the discharge energy and the current path are derived. The obvious partition and refined grains around the crack tip are prominent because of violent temperature change. The experimental and simulation results are found in fine agreement. The high current pulsed discharge can be used effectively to prevent a crack to further expand and show substantial potentials for application in remanufacturing domain.