Title of Paper:基于CMOS工艺的双层非制冷热敏电阻型红外探测器

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Date of Publication:2022-10-10

Journal:光电子 激光

Volume:25

Issue:5

Page Number:845-850

ISSN No.:1005-0086

Abstract:This paper develops a low-cost double-layer uncooled thermistor infrared
   detector based on standard 0.5mum CMOS technology and micromachining
   processes.The double-layer infrared detector employs a hidden-bridge-leg
   micro-bridge structure with a 55mum*55mum bridge deck,two 7.5mum width
   hidden bridge legs and an aluminum thermistor.The micro-bridge structure
   is implemented by the surface sacrificial layer technology without any
   additional lithography or thin film deposition procedure.The sacrificial
   layers include three materials:aluminum,tungsten and polysilicon.The
   double-layer infrared detector has a size of 65mum*65mum and a fill
   factor of 71.6%.The temperature coefficient of resistance (TCR)of the
   aluminum thermistor is about 0.419%/K in a muffle furnace whose
   temperature varies from 10℃to 100℃.The thermal conductance of the
   double-layer infrared detector is calculated as 1.96*10~(-5) W/K by
   measuring responses to different heating currents from 0.3mA to
   4.8mA.The fabricated infrared detector is irradiated by an infrared
   laser which is modulated by a mechanical chopper in a frequency range of
   10-1000Hz.Measurements show that the thermal time constant is 1.14ms and
   the thermal mass is 2.23*10~(-8) J/K.The responsivity of the infrared
   detector is about 2.54*10~4 V/W at 10Hz and the calculated detectivity
   is 1.6*10~8 cmHz~(1/2)/W.

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