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论文类型：期刊论文

第一作者：Shen, Ning

通讯作者：Tang, ZA (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, Liaoning IC Technol Key Lab, Dalian 116024, Peoples R China.

合写作者：Yu, Jun,Tang, Zhenan

发表时间：2015-06-15

发表刊物：IEEE PHOTONICS TECHNOLOGY LETTERS

收录刊物：SCIE、EI、Scopus

卷号：27

期号：12

页面范围：1247-1249

ISSN号：1041-1135

关键字：Uncooled infrared detectors; CMOS infrared detectors; low-cost microbolometers; CMOS microbolometers

摘要：This letter describes the implementation of a low-cost 32 x 32 uncooled infrared microbolometer array using a standard 0.5-mu m CMOS process and a surface sacrificial layer technique, in which the CMOS metal interconnection layers are used as the infrared sensitive material. The sacrificial layer embedded during the CMOS fabrication can be etched using a simple wet etching process following the CMOS processes, without the need for any lithography or material deposition steps. The CMOS metal interconnect layers are aluminum, with a temperature coefficient of resistance of 0.398%/K. The 32 x 32 focal plane array (FPA) has a pixel size of 65 mu m x 65 mu m and a fill factor of 29%. The thermal conductance of the FPA was measured to be 3.47 x 10(-6) W/K, with a thermal time of 3.85 ms, and a dc responsivity of 1050 V/W at a 10-Hz chopper frequency. The total measured rms noise of the microbolometer is 0.706 mu V for a 10-kHz bandwidth, resulting in a detectivity of 5.2 x 10(8) cmHz(1/2)/W.