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论文类型：期刊论文

第一作者：Huang, Zheng Xing

通讯作者：Tang, ZA (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, A416 Chuangxinyuan Bldg,2 Linggong Rd, Dalian 116024, Liaoning, Peoples R China.

合写作者：Tang, Zhen An,Yu, Jun,Bai, Suyuan

发表时间：2011-02-15

发表刊物：PHYSICA B-CONDENSED MATTER

收录刊物：Scopus、SCIE、EI

卷号：406

期号：4

页面范围：818-823

ISSN号：0921-4526

关键字：ZnO; Thin film; Thermal conductivity; Transient thermoreflectance

摘要：Thermal conductivities (TCs) of ZnO thin films of thickness 80-276 nm prepared by sol-gel method are measured by the transient thermoreflectance (TTR) system. The obtained TCs ranging from 1.4 to 6.5 W/m K decrease while the thickness decrease. The measured TCs are much smaller than those of bulk ZnO, which is about 100 IN/En K. The possible reasons for the decrease are the grain boundary and defects. The latter is the dominating one from the analysis. (C) 2010 Published by Elsevier B.V.