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论文类型：期刊论文

第一作者：Huang, Zhengxing

通讯作者：Tang, ZA (reprint author), Dalian Univ Technol, Dept Elect Engn, Dalian 116024, Peoples R China.

合写作者：Tang, Zhenan,Yu, Jun,Bai, Suyuan

发表时间：2009-06-01

发表刊物：PHYSICA B-CONDENSED MATTER

收录刊物：SCIE、EI

卷号：404

期号：12-13

页面范围：1790-1793

ISSN号：0921-4526

关键字：Thin film; Molecular dynamics; Thermal conductivity

摘要：Thermal conductivity (TC) of thin films will be influenced by boundary if the thickness is close to the mean free path (MFP). In this paper, we calculate the TC of crystalline and amorphous SiO2 thin films, which are commonly used materials in micro devices and Integrated Circuits, by nonequilibrium molecular dynamics (NEMD) simulations. The calculation temperatures are from 100 to 700 K and the thicknesses are from 2 to 8 nm. For crystalline thin films, thickness is less than MFP, for amorphous thin films, the thickness is larger than MFP. The TC of crystalline thin films reach their peak values at different temperatures for different thicknesses, the smaller thickness, the larger peak value obtained. But for amorphous thin films, the results show that the temperature dependence of thin films is similar to bulk materials. The obtained temperature dependence of the thin films is consistent with some previous measurements and the theory predictions. (C) 2009 Elsevier B.V. All rights reserved.