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论文类型：期刊论文

发表时间：2011-10-01

发表刊物：RARE METAL MATERIALS AND ENGINEERING

收录刊物：SCIE、PKU、ISTIC

卷号：40

页面范围：218-220

ISSN号：1002-185X

关键字：magnetron sputtering; TaN film; annealing

摘要：Tantalum nitride (TaN) films were synthesized on bearing steels and Silicon wafers by Electron Cyclotron Resonance microwave plasma source enhanced DC sputtering and the effects of annealing at different temperature on mechanical properties of TaN films were investigated. The morphology and structure of the films were investigated by scanning electron microscope (SEM), X-ray diffraction (XRD) and X-ray Photoelectron Spectroscopy (XPS). The mechanical properties were evaluated using nano-indentation. The results showed that the hardness and modulus of TaN film without annealing presented the maximal value, but which intensely dropped down with the increase of annealing temperature between 423K and 473K, meanwhile structure and combination in the films partially changed, but this phenomenon disappeared beyond the range. It is found that annealing is a key factor for altering structure and mechanical properties of TaN film.