Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2014-02-01

Journal: SCRIPTA MATERIALIA

Included Journals: Scopus、EI、SCIE

Volume: 72-73

Page Number: 39-42

ISSN: 1359-6462

Key Words: Nanotwinned semiconductor; Molecular dynamics; CdTe; Indentation; Twin thickness

Abstract: By varying the twin thickness from 4 to 23 nm, a maximum of hardness is achieved by molecular dynamics simulations at a twin thickness of 16 nm. When the twin thickness is >16 nm, the hardness is consistent with the Hall-Petch effect, whereas the hardness of a twin <= 16 nm thick is in a good agreement with the reverse Hall Petch effect. This is attributed to a transformation of the synergistic effect between both twin boundaries from monotonically increasing to decreasing with increasing twin thickness. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.