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Indexed by:期刊论文

Date of Publication:2010-01-01

Journal:INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY

Included Journals:SCIE、EI、Scopus

Volume:46

Issue:5-8

Page Number:563-569

ISSN No.:0268-3768

Key Words:Material removal mechanism; Precision grinding; Chemical mechanical polishing; CdZnTe wafer; Soft-brittle crystal

Abstract:Cd(0.96)Zn(0.04)Te (111) wafers were precisely ground by #800, #1500, #3000, and #5000 diamond grinding wheel. For comparison, Cd(0.96)Zn(0.04)Te (110) wafers were machined by lapping, mechanical polishing, and chemical mechanical polishing. High-resolution environmental scanning electron microscopy equipped with energy dispersive spectroscopy and optical interference surface profiler both were employed to investigate the surface quality and material removal mechanism. The results show that the material removal mechanism of #800 grinding wheel is abrasive wear, fatigue wear, and adhesive wear, and that of #1500 is abrasive wear and fatigue wear. Both the material removal mechanism of #3000 and #5000 grinding wheel are abrasive wear, leading to the excellent ductile removal precision grinding. While the material removal mechanism of CMP on CdZnTe wafers is firstly chemical resolving reaction and secondly mechanical carrying action. Moreover, precision grinding exhibits high-efficiency character and eliminates the imbedding of free abrasives of Al(2)O(3) and SiO(2).