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Indexed by:期刊论文

Date of Publication:2008-02-01

Journal:PHILOSOPHICAL MAGAZINE LETTERS

Included Journals:SCIE、EI

Volume:88

Issue:2

Page Number:145-151

ISSN No.:0950-0839

Abstract:CeO2-doped diamond-like carbon (DLC) films with thicknesses of 180-200 nm were deposited by unbalanced magnetron sputtering. When the CeO2 concentration is in the range 5-8%, the residual compressive stress of the deposited films is reduced by 90%, e.g. from about 4.1 GPa to 0.5 GPa, whereas their adhesion strength increases. These effects are attributed to the dissolution of CeO2 within the DLC amorphous matrix and a widening interface between the DLC film and the Si substrate, respectively.