Release Time:2019-03-11  Hits:

Indexed by: Journal Article

Date of Publication: 2017-09-02

Journal: INTEGRATED FERROELECTRICS

Included Journals: Scopus、EI、SCIE

Volume: 183

Issue: 1

Page Number: 100-109

ISSN: 1058-4587

Key Words: PGZT thin films; (100) preferential orientation; dielectric properties; ferroelectric properties; piezoelectric properties

Abstract: Gadolinium (Gd)-doped lead zirconium titanate (PGZT) thin films have been prepared by Sol-Gel methods to investigate the effects of Gd doping on crystalline orientation, structural and electric properties of lead zirconium titanate (PZT) films according to doping concentration from 0% to 5%. Conventional heat process and appropriate doping concentration, without introducing a single crystal seed layer, were used for obtaining (100)-oriented PGZT thin films with dense columnar structures. The maximum dielectric constant (1310.35 at 100 Hz) and the optimum ferroelectric properties were obtained for 2% Gd-doped film. 1% Gd-doped PZT film exhibited excellent piezoelectric properties.