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Indexed by:期刊论文

Date of Publication:2017-09-02

Journal:INTEGRATED FERROELECTRICS

Included Journals:SCIE、EI、Scopus

Volume:183

Issue:1

Page Number:100-109

ISSN No.:1058-4587

Key Words:PGZT thin films; (100) preferential orientation; dielectric properties; ferroelectric properties; piezoelectric properties

Abstract:Gadolinium (Gd)-doped lead zirconium titanate (PGZT) thin films have been prepared by Sol-Gel methods to investigate the effects of Gd doping on crystalline orientation, structural and electric properties of lead zirconium titanate (PZT) films according to doping concentration from 0% to 5%. Conventional heat process and appropriate doping concentration, without introducing a single crystal seed layer, were used for obtaining (100)-oriented PGZT thin films with dense columnar structures. The maximum dielectric constant (1310.35 at 100 Hz) and the optimum ferroelectric properties were obtained for 2% Gd-doped film. 1% Gd-doped PZT film exhibited excellent piezoelectric properties.