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Indexed by:期刊论文

Date of Publication:2017-09-02

Journal:INTEGRATED FERROELECTRICS

Included Journals:SCIE、EI、Scopus

Volume:183

Issue:1

Page Number:182-192

ISSN No.:1058-4587

Key Words:PZT thin films; buffer layer; lead content; (100) preferential orientation; sol-gel methods

Abstract:Lead zirconate titanate (PZT) thin films deposited on Pt electrode and Pb1+x(Zr-0.52,Ti-0.48)O-3 (x = 0.10, 0.15, 0.25, 0.30) buffer layer have been prepared by sol-gel methods to investigate the effects of lead content in the buffer layer on crystalline orientation, electric and fatigue properties of PZT films. XRD and SEM showed that all films exhibited dense perovskite structure with (100) preferential orientation. Themaximum dielectric constant (1571 at 100 Hz) was obtained in the PZT film with buffer layer containing 25% excess lead, which increased by 42.5% compared with the film without buffer layer. Fatigue resistance was improved by introducing buffer layer.