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Indexed by:期刊论文

Date of Publication:2017-12-01

Journal:JOURNAL OF CERAMIC SCIENCE AND TECHNOLOGY

Included Journals:SCIE、EI

Volume:8

Issue:4

Page Number:519-524

ISSN No.:2190-9385

Key Words:PNZT thin films; (100) preferred orientation; microstructure; fatigue resistance; sol-gel process

Abstract:Pb(NbxZr0.52Ti0.48)O-3 (PNZT) (x = 0 %, 1%, 2 %, 3%, 4 %, 5%) thin films were prepared in a sol-gel process to investigate the effects of Nb doping on the crystalline orientation, electric and fatigue properties of lead zirconate titanate (PZT) films. X-ray diffraction (XRD) and scanning electron microscope (SEM) analyses showed that PNZT films withNbdoping concentration below 5% exhibited a dense perovskite structure with (100) preferred orientation. The maximum dielectric constant was obtained in 4% Nb-doped PZT film with a precision impedance analyzer. Remnant polarization and fatigue resistance were enhanced significantly with 2% Nb dopant.