Current position: Hognbin Ding >> Scientific Research >> Patents

一种分析聚变装置第一镜杂质沉积层厚度及其结构的方法

Release Time:2019-03-09  Hits:

First Author: Ran Hai

Disigner of the Invention: hongbin ding,信裕,张辰飞

Application Number: CN201310027887.9

Authorization Date: 2013-01-25

Authorization Number: CN103105368A

Prev One:基于反射式太赫兹光谱第一镜表面杂质分析装置

Next One:一种原位分析聚变装置第一镜表面杂质的方法
Recommended Ph.D.Supervisor Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Mobile phone sweep