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Indexed by:期刊论文

Date of Publication:2013-05-01

Journal:INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY

Included Journals:SCIE、EI、Scopus

Volume:66

Issue:5-8

Page Number:947-953

ISSN No.:0268-3768

Key Words:Ultrathin blade; High-speed dicing; Silicon wafer; Chipping

Abstract:High-speed dicing tests were conducted for silicon wafers using developed ultrathin electroplated diamond blades with metal bond. Chipping and kerf widths of 1.5 and 28 mu m, respectively, are achieved by the developed ultrathin diamond blades. The calculated maximum undeformed chip thickness varied from 9.6 to 25.5 nm for various high-speed dicing conditions. The variation tendency between experimental chip width induced by three diamond blades and corresponding calculated maximum undeformed chip thickness is consistent. Scanning electron microscopy showed that the microstructure of diamond dicing blades significantly affected the chip width.