Hits:
Date of Publication:2011-01-01
Journal:第五届届全国氧化锌学术会议
Page Number:77-77
Pre One:Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate
Next One:p-GaN/p-graded-AlxGa1-xN/n-ZnO发光二极管的电致发光
