Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate
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Date of Publication:2022-10-03
Journal:Scientific Reports
Affiliation of Author(s):微电子学院
Volume:4
Page Number:6322
ISSN No.:2045-2322
