大连理工大学主页平台管理系统申人升 Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate Home

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Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

Release Time:2022-10-03 Hits:

Date of Publication: 2022-10-03

Journal: Scientific Reports

Institution: 微电子学院

Volume: 4

Page Number: 6322

ISSN: 2045-2322

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