Release Time:2022-10-03 Hits:
Date of Publication: 2022-10-03
Journal: JOURNAL OF LUMINESCENCE
Volume: 223
ISSN: 0022-2313
Prev One:Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Content InGaN Epilayers Grown by Metal-Organic Chemical Vapor Deposition
Next One:Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate