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Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment

Release Time:2022-10-03  Hits:

Date of Publication: 2022-10-03

Journal: JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS

Volume: 24

Issue: 9

Page Number: 3299-3302

ISSN: 0957-4522

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