Release Time:2022-10-03 Hits:
Date of Publication: 2022-10-03
Journal: 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)
Page Number: 1101-1103
Prev One:High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates
Next One:Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment