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Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3

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Date of Publication:2022-10-02

Journal:Chinese Physics B

Volume:28

Issue:4

ISSN No.:1674-1056

Pre One:Effect of growth pressure on the characteristics of beta-Ga2O3 films grown on GaAs (100) substrates by MOCVD method

Next One:Effect of the magnesium composition on the properties of Mg(x)Zn(1-x)O-based homojunction light-emitting diodes
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