Current position: Home >> Scientific Research >> Paper Publications

Effect of growth pressure on the characteristics of beta-Ga2O3 films grown on GaAs (100) substrates by MOCVD method

Release Time:2022-10-03  Hits:

Date of Publication: 2022-10-02

Journal: APPLIED SURFACE SCIENCE

Volume: 325

Issue: C

Page Number: 258-261

ISSN: 0169-4332

Prev One:Dominant UV emission from p-MgZnO/n-GaN light emitting diodes

Next One:Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3