Hits:
Date of Publication:2022-10-07
Journal:Chinese Physics Letters
Affiliation of Author(s):物理学院
Volume:26
Issue:9
ISSN No.:0256-307X
Pre One:Performance-Improved Normally-off A1GaN/GaN High-Electron Mobility Transistors with a Designed p-GaN Area under the Recessed Gate
Next One:Photoluminescence, optical transition properties and temperature-induced shift of charge transfer band and temperature sensing property of GdNbTiO6: Sm3+ phosphors
