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Performance-Improved Normally-off A1GaN/GaN High-Electron Mobility Transistors with a Designed p-GaN Area under the Recessed Gate

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Date of Publication:2022-10-07

Journal:2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)

Affiliation of Author(s):光电工程与仪器科学学院

Page Number:1230-1232

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