Performance-Improved Normally-off A1GaN/GaN High-Electron Mobility Transistors with a Designed p-GaN Area under the Recessed Gate
Release Time:2023-12-20 Hits:
Date of Publication: 2022-10-07
Journal: 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)
Institution: 光电工程与仪器科学学院
Page Number: 1230-1232