Current position: Home >> Scientific Research >> Patents

一种用于高质量氧化物半导体材料制备的MOCVD加热盘

Release Time:2019-10-11  Hits:

First Author: 柳阳

Disigner of the Invention: 陈远鹏,申人升,夏晓川,梁红伟

Application Number: CN201710261163.9

Authorization Date: 2017-04-21

Authorization Number: CN107083541A

Prev One:空穴导电特性氧化镓膜的制备方法及空穴导电特性氧化镓膜

Next One:金属支撑垂直结构无荧光粉白光LED
Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Mobile phone sweep