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在镓系异质半导体衬底上制备氧化镓膜的方法及氧化镓膜

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First Author:xiaxiaochuan

Disigner of the Invention:liuyang,Shen Rensheng,lianghongwei,duguotong,hulizhong

Affilication of Author(s):微电子学院

Application Number:CN103456603A

Authorization number:CN201310401102.X

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