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空穴导电特性氧化镓膜的制备方法及空穴导电特性氧化镓膜

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First Author:lianghongwei

Disigner of the Invention:xiaxiaochuan,liuyang,Shen Rensheng,duguotong,hulizhong

Affilication of Author(s):微电子学院

Application Number:CN103469173A

Authorization number:CN201310414275.5

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